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Search for "electron recombination" in Full Text gives 5 result(s) in Beilstein Journal of Nanotechnology.

Recent trends in Bi-based nanomaterials: challenges, fabrication, enhancement techniques, and environmental applications

  • Vishal Dutta,
  • Ankush Chauhan,
  • Ritesh Verma,
  • C. Gopalkrishnan and
  • Van-Huy Nguyen

Beilstein J. Nanotechnol. 2022, 13, 1316–1336, doi:10.3762/bjnano.13.109

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Published 11 Nov 2022

Facile synthesis of a ZnO–BiOI p–n nano-heterojunction with excellent visible-light photocatalytic activity

  • Mengyuan Zhang,
  • Jiaqian Qin,
  • Pengfei Yu,
  • Bing Zhang,
  • Mingzhen Ma,
  • Xinyu Zhang and
  • Riping Liu

Beilstein J. Nanotechnol. 2018, 9, 789–800, doi:10.3762/bjnano.9.72

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  • carrier separation efficiency, photoluminescence (PL) emission spectra was carried out and the results are displayed in Figure S4, Supporting Information File 1. Generally speaking, stronger PL intensity indicates a higher photoinduced hole–electron recombination rate, which is not in the photocatalysts
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Published 05 Mar 2018

Performance of colloidal CdS sensitized solar cells with ZnO nanorods/nanoparticles

  • Anurag Roy,
  • Partha Pratim Das,
  • Mukta Tathavadekar,
  • Sumita Das and
  • Parukuttyamma Sujatha Devi

Beilstein J. Nanotechnol. 2017, 8, 210–221, doi:10.3762/bjnano.8.23

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  • agglomeration forms more interparticle gaps. This leads to the higher possibility of electron recombination and entrapment resulting in poor photovoltaic performance for particles. On the contrary, the multioriented 1D ZnO nanorods promote better light harvesting and faster electron injection, resulting in
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Published 23 Jan 2017

Reduced electron recombination of dye-sensitized solar cells based on TiO2 spheres consisting of ultrathin nanosheets with [001] facet exposed

  • Hongxia Wang,
  • Meinan Liu,
  • Cheng Yan and
  • John Bell

Beilstein J. Nanotechnol. 2012, 3, 378–387, doi:10.3762/bjnano.3.44

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  • also observed after TiCl4 treatment. The synergistic effect of the variation of the TiO2 conduction band and the electron recombination determined the open-circuit voltage of the DSC. Keywords: dye-sensitized solar cells; electrochemical impedance spectroscopy; electron recombination; TiO2 [001] facet
  • depends on several reactions that occur at the interface between different materials [3]. In particular, the process of electron injection at the TiO2/dye interface and the electron recombination reaction at the TiO2/dye/electrolyte interface are critical because they control both the short-circuit
  • process of electron recombination is mainly dominated by the interaction between the electron at the surface of TiO2 and I3− ions in the electrolyte. Generally, the TiO2 used in DSCs is based on the anatase phase with the [101] facet exposed, due to the robust stability of this surface compared to other
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Published 07 May 2012

Highly efficient ZnO/Au Schottky barrier dye-sensitized solar cells: Role of gold nanoparticles on the charge-transfer process

  • Tanujjal Bora,
  • Htet H. Kyaw,
  • Soumik Sarkar,
  • Samir K. Pal and
  • Joydeep Dutta

Beilstein J. Nanotechnol. 2011, 2, 681–690, doi:10.3762/bjnano.2.73

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  • both in the presence and absence of Au nanoparticles. A slower fluorescence decay associated with the electron recombination process, observed in the presence of Au nanoparticles, confirmed the blocking of the electron transfer from ZnO back to the dye or electrolyte by the Schottky barrier formed at
  • electrons is high at each interface. Law et al. [5] proposed the use of single crystalline zinc oxide (ZnO) nanowires instead of the widely used titanium oxide (TiO2) porous thin film to reduce the probability of electron recombination in the DSSC by providing a direct pathway for the electrons to diffuse
  • injected electrons at the CB of ZnO in presence of Au nanoparticles compared to the bare ZnO-nanorod samples, indicating a lower probability of electron recombination at the ZnO/Au interface resulting from the blocking of back electron transfer due to the existence of the Schottky barrier at this interface
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Published 13 Oct 2011
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